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IRFPG30PBF

IRFPG30PBF資料
IRFPG30PBF
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File Size : 116 KB
Manufacturer:IR
Description:  There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.   The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
 
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  1PCS 100PCS 1K 10K  
價 格  
 
 
型 號:IRFPG30PBF
廠 家:IR
封 裝:IR
批 號:18+
數 量:1508
說 明:

產品種類:MOSFET

晶體管極性:N-Channel

汲極/源極擊穿電壓:1000 V

閘/源擊穿電壓:+/- 20 V

漏極連續電流:3.1 A

導通電阻:5 Ohms

配置:Single

最大工作溫度:+ 150 C

安裝風格:Through Hole

封裝 / 箱體:TO-247AC

封裝:Tube

商標:Vishay / Siliconix

下降時間:29 ns

最小工作溫度:- 55 C

功率耗散:125 W

上升時間:24 ns

工廠包裝數量:25

典型關閉延遲時間:89 ns


 
 
運  費:99元包郵
所在地:深圳
新舊程度:全新原裝
 
 
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